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  inchange semiconductor product specification silicon npn power transistors mj3000/3001 description ? with to-3 package ? darlington ?high dc current gain ? complement to type mj2500/2501 applications ?for use as output devic es in complementary general purpose amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit mj3000 60 v cbo collector-base voltage MJ3001 open emitter 80 v mj3000 60 v ceo collector-emitter voltage MJ3001 open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 10 a i b base current 0.2 a p d total power dissipation t c =25 ?? 150 w t j junction temperature 200 ?? t stg storage temperature -55~200 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors mj3000/3001 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit mj3000 60 v (br)ceo collector-emitter breakdown voltage MJ3001 i c =0.1a ;i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =5a; i b =20ma 2.0 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =50ma 4.0 v v be base-emitter on voltage i c =5a ; v ce =3v 3.0 v mj3000 v ce =60v; r be =1.0k |? t c =150 ?? 1.0 5.0 i cer collector cut-off current MJ3001 v ce =80v; r be =1.0k |? t c =150 ?? 1.0 5.0 ma mj3000 v ce =30v; i b =0 i ceo collector cut-off current MJ3001 v ce =40v; i b =0 1.0 ma i ebo emitter cut-off current v eb =5v; i c =0 2.0 ma h fe dc current gain i c =5a ; v ce =3v 1000 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.17 ?? /w
inchange semiconductor product specification 3 silicon npn power transistors mj3000/3001 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.1mm)


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